DocumentCode :
1259424
Title :
Thermal behavior of tensile-strain InGaAsP-InP lasers with varying ridgewidth
Author :
Huang, Ron ; Simmons, John G. ; Jessop, Paul E. ; Evans, John
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Volume :
9
Issue :
7
fYear :
1997
fDate :
7/1/1997 12:00:00 AM
Firstpage :
889
Lastpage :
891
Abstract :
The thermal behavior of tensile-strain InGaAsP-InP laser diodes with varying ridgewidth is investigated experimentally. The temperature rise during continuous-wave (CW) operation was determined by comparing CW light-current (L-I) curves with short-pulsed (L-I) curves at different substrate temperatures. It is shown that the thermal impedance R depends strongly on the width w of the ridge and that this effect is different before and after threshold. In the first case, R decreases with increase of ln(w) and in the second case, R increases with increase of 1/w. However, the wider the ridge, the lower the CW maximum operating temperature because of the higher temperature dependence of dl/sub th/(T)/dT.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; thermal resistance; waveguide lasers; 110 to 400 K; CW light-current curves; CW maximum operating temperature; CW operation; InGaAsP-InP; MQW structure; ridgewidth dependence; short-pulsed light-current curves; substrate temperatures; temperature rise; tensile-strain InGaAsP-InP lasers; thermal behavior; thermal impedance; Diode lasers; Heating; Impedance; Laser modes; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; Waveguide lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.593335
Filename :
593335
Link To Document :
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