Title :
Deep oxide trench termination structure for super-junction MOSFET
Author :
Run-yan Miao ; Fang Lu ; Yan-ying Wang ; Da-wei Gong
Author_Institution :
State Key Lab. of Surface Phys., Fudan Univ., Shanghai, China
Abstract :
Deep oxide trench isolation with a p-type pillar guard is suggested as the termination structure for a high voltage super-junction (SJ) MOSFET device. With an additional p-type pillar guard, such a structure can result in a trapezoidal field profile in depth along the oxide trench sidewall and the device has improved breakdown voltage limited by an intrinsic super-junction structure.
Keywords :
MOSFET; electric breakdown; semiconductor junctions; breakdown voltage; deep oxide trench isolation; deep oxide trench termination structure; high voltage super-junction; p-type pillar guard; superjunction MOSFET; trapezoidal field profile;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.2061
