High Q spiral-type microinductors on silicon substrates

Author

Park, Jae Y. ; Allen, Mark G.

Author_Institution

Microsyst. Lab., LG Corp. Inst. of Technol., Seoul, South Korea

Volume

35

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

3544

Lastpage

3546

Abstract

Although integrated microinductors are in high demand for high frequency applications, their usefulness is limited due to their poor performance (e.g., low Q-factor, low inductance, and high parasitics). To expand the range of applicability of integrated microinductors at high frequencies, their electrical characteristics, especially quality factor and inductance, must be improved. In this research, integrated spiral-type microinductors suspended above the silicon substrate using surface micromachining and electroplating techniques are investigated. The silicon substrate used has resistivity ranging from 3~7 ohms-cm and thickness ranging from 330 μm~430 μm. These fabricated inductors have inductance ranging from 10~25 nH and Quality factor ranging from 14~18

Keywords

Q-factor; electroplating; inductors; micromachining; Si; electroplating; high frequency electrical characteristics; inductance; parasitic capacitance; planar passive element; quality factor; silicon semiconductor substrate; surface micromachining; suspended spiral-type integrated microinductor; Coils; Conductors; Dielectric losses; Dielectric substrates; Frequency; Inductance; Inductors; Q factor; Silicon; Spirals;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.800584

Filename

800584