47 GHz VCO with low phase noise fabricated in a SiGe bipolar production technology

Author

Li, H. ; Rein, H.M. ; Kreienkamp, R. ; Klein, W.

Author_Institution

Ruhr-Univ., Bochum, Germany

Volume

12

Issue

3

fYear

2002

fDate

3/1/2002 12:00:00 AM

Firstpage

79

Lastpage

81

Abstract

A low-phase-noise and low-cost millimeter-wave voltage-controlled oscillator (VCO) has been fully integrated in commercial SiGe bipolar technologies. By varying the bias voltage of the on-chip varactor, the frequency can be continuously tuned from 43.6 to 47.3 GHz. In this frequency range, single-sideband phase noise between -103 and -108.5 dBc/Hz at 1 MHz offset frequency was measured. The output voltage swing of the differential circuit is about 0.85 V/sub p-p/ for the single-ended and 1.7 V/sub p-p/ for the differential output.

Keywords

Ge-Si alloys; bipolar MIMIC; circuit tuning; integrated circuit design; integrated circuit noise; millimetre wave oscillators; phase noise; semiconductor materials; varactors; voltage-controlled oscillators; 43.6 to 47.3 GHz; 47 GHz; EHF; MM-wave VCO; SSB phase noise; SiGe; SiGe bipolar production technology; commercial SiGe bipolar technologies; continuous tuning; low-cost VCO; low-phase-noise VCO; millimeter-wave VCO; single-sideband phase noise; varactor bias voltage variation; voltage-controlled oscillator; wide tuning range; Frequency measurement; Germanium silicon alloys; Integrated circuit technology; Millimeter wave technology; Noise measurement; Phase noise; Silicon germanium; Varactors; Voltage; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/7260.989857

Filename

989857