DocumentCode
1259757
Title
Pseudo-Hall effect and anisotropic magnetoresistance in a micron-scale Ni80Fe20 device
Author
Yao, C.C. ; Hasko, D.G. ; Lee, W.Y. ; Hirohata, A. ; Xu, Y.B. ; Bland, J.A.C.
Author_Institution
Cavendish Lab., Cambridge Univ., UK
Volume
35
Issue
5
fYear
1999
fDate
9/1/1999 12:00:00 AM
Firstpage
3616
Lastpage
3618
Abstract
The pseudo-Hall effect (PHE) and anisotropic magnetoresistance (AMR) in a micron-scale Ni80Fe20 six-terminal device, fabricated by optical lithography and wet chemical etching from a high quality UHV grown 30 Å Au/300 A Ni80Fe20 film, have been studied. The magnetisation reversal in different parts of the device has been measured using magneto-optical Kerr effect (MOKE). The device gives a 50% change in PHE voltage with an ultrahigh sensitivity of 7.3%Oe-1 at room temperature. The correlation between the magnetisation, magneto-transport properties, lateral shape of the device and directions of the external applied field is discussed based on extensive MOKE, AMR and PHE results
Keywords
Hall effect devices; Kerr magneto-optical effect; etching; ferromagnetic materials; iron alloys; magnetic sensors; magnetisation reversal; magnetoresistive devices; microsensors; nickel alloys; photolithography; 300 angstrom; Ni80Fe20; anisotropic magnetoresistance; external applied field; ferromagnetic materials; magnetic sensors; magnetisation reversal; magneto-optical Kerr effect; magneto-transport properties; magnetoresistive devices; optical lithography; pseudo-Hall effect; sensitivity; six-terminal device; wet chemical etching; Anisotropic magnetoresistance; Chemicals; Geometrical optics; Iron; Lithography; Nonlinear optics; Optical devices; Optical films; Optical sensors; Wet etching;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.800608
Filename
800608
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