Phonon-Limited Transport in Graphene Pseudospintronic Devices

A predicted room-temperature phase transition from Fermi liquid to dissipationless Bose-Einstein exciton superfluid suggests that graphene pseudospin devices may have the potential to far outperform traditional CMOS devices. When examining the possibility of a room-temperature exciton condensate, it is important to consider scattering of charge carriers by phonons in each of the constituent graphene monolayers. Using the nonequilibrium Green´s function formalism, we examine the effect that carrier-phonon scattering has on device performance. We find that the effect of carrier-phonon scattering has strong dependence on the device coherence length. As such, for large gate voltages, the effect of phonons on interlayer transport is negligible.