200-V Lateral Superjunction LIGBT on Partial SOI

This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R_dson of 765 mΩ·mm². It exhibits half the value of specific on-state resistance R_dson and three times higher saturation current (I_dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R_dson at 175 ^°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process.