Title :
A 15-GHz gate array implemented with AlGaAs/GaAs heterojunction bipolar transistors
Author :
Wang, Keh-Chung ; Asbeck, Peter M. ; Chang, Mau-Chung F. ; Nubling, Randy B. ; Pierson, Richard L. ; Sheng, Neng-Haung ; Sullivan, Gerard J. ; Yu, Jimmy ; Chen, Andy ; Clement, Don ; Tsen, Tom C. ; Basit, Haris F. ; George, Joseph D. ; Young, Rock
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
fDate :
11/1/1991 12:00:00 AM
Abstract :
The authors report on a 500-gate array implemented with AlGaAs/GaAs heterojunction bipolar transistors (HBTs) using an ECL/CML circuit approach. The HBTs have ft´s and f max´s above 55 GHz. Frequency dividers personalized on this gate array have shown flip-flop toggle rates up to 15.6 GHz, the highest ever demonstrated with gate arrays. Measurement on delay chains at 2-mA source current showed unloaded gate delay of 26 ps and additional delays of 8 ps/fan-out and 0.12 ps/fF of capacitive load. The gate array has been fabricated successfully in a research laboratory and in a pilot production facility
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; logic arrays; 15.6 GHz; 2 mA; 26 ps; 55 GHz; AlGaAs-GaAs; CML circuit approach; ECL circuit approach; capacitive load; delay chains; flip-flop toggle rates; gate array; gate delay; heterojunction bipolar transistors; pilot production facility; research laboratory; semiconductors; source current; Clocks; Current measurement; Delay; Dielectric thin films; Digital circuits; Flip-flops; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Logic arrays;
Journal_Title :
Solid-State Circuits, IEEE Journal of
