Title :
2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors
Author :
Arcari, Mario ; Scarpa, Giuseppe ; Lugli, Paolo ; Tallarida, Graziella ; Huby, N. ; Guziewicz, E. ; Krajewski, Tomasz A. ; Godlewski, M.
Author_Institution :
Inst. for Nanoelectron., Tech. Univ. of Munich, Munich, Germany
Abstract :
In this paper, we complement our previous work on the study of low-temperature rectifying junctions based on Ag/ZnO Schottky barriers. Diodes characterized by very high ION/IOFF ratio and ideality factors considerably higher than unity, in disagreement with the thermionic emission model, are modeled with a 2-D finite-element simulator. We could discard tunneling and inhomogeneous barrier-height distribution as sources for this anomalous value. A new interface charge layer model was therefore introduced, which is able to reproduce the electrical behavior in devices with large ideality factors without decreasing the rectifying properties.
Keywords :
II-VI semiconductors; Schottky barriers; Schottky diodes; finite element analysis; silver; thermionic emission; wide band gap semiconductors; zinc compounds; 2D finite-element modeling; Ag-ZnO; ION-IOFF ratio; Schottky barriers; Schottky diodes; discard tunneling; electrical behavior; inhomogeneous barrier-height distribution; interface charge layer model; large ideality factors; low-temperature rectifying junctions; thermionic emission model; Doping; Junctions; Schottky barriers; Schottky diodes; Zinc oxide; Crossbar memory; Schottky-junction modeling; high ideality factor; zinc oxide (ZnO) contacts;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2207459
