2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors

Author

Arcari, Mario ; Scarpa, Giuseppe ; Lugli, Paolo ; Tallarida, Graziella ; Huby, N. ; Guziewicz, E. ; Krajewski, Tomasz A. ; Godlewski, M.

Author_Institution

Inst. for Nanoelectron., Tech. Univ. of Munich, Munich, Germany

Volume

59

Issue

10

fYear

2012

Firstpage

2762

Lastpage

2766

Abstract

In this paper, we complement our previous work on the study of low-temperature rectifying junctions based on Ag/ZnO Schottky barriers. Diodes characterized by very high I_ON/I_OFF ratio and ideality factors considerably higher than unity, in disagreement with the thermionic emission model, are modeled with a 2-D finite-element simulator. We could discard tunneling and inhomogeneous barrier-height distribution as sources for this anomalous value. A new interface charge layer model was therefore introduced, which is able to reproduce the electrical behavior in devices with large ideality factors without decreasing the rectifying properties.

Keywords

II-VI semiconductors; Schottky barriers; Schottky diodes; finite element analysis; silver; thermionic emission; wide band gap semiconductors; zinc compounds; 2D finite-element modeling; Ag-ZnO; I_ON-I_OFF ratio; Schottky barriers; Schottky diodes; discard tunneling; electrical behavior; inhomogeneous barrier-height distribution; interface charge layer model; large ideality factors; low-temperature rectifying junctions; thermionic emission model; Doping; Junctions; Schottky barriers; Schottky diodes; Zinc oxide; Crossbar memory; Schottky-junction modeling; high ideality factor; zinc oxide (ZnO) contacts;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2207459

Filename

6261533