Title :
A Dielectric-Modulated Tunnel-FET-Based Biosensor for Label-Free Detection: Analytical Modeling Study and Sensitivity Analysis
Author :
Narang, Rakhi ; Reddy, K. V Sasidhar ; Saxena, Manoj ; Gupta, R.S. ; Gupta, Mridula
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Abstract :
In this paper, an analytical model for a p-n-p-n tunnel field-effect transistor (TFET) working as a biosensor for label-free biomolecule detection purposes is developed and verified with device simulation results. The model provides a generalized solution for the device electrostatics and electrical characteristics of the p-n-p-n-TFET-based sensor and also incorporates the two important properties possessed by a biomolecule, i.e., its dielectric constant and charge. Furthermore, the sensitivity of the TFET-based biosensor has been compared with that of a conventional FET-based counterpart in terms of threshold voltage (Vth) shift, variation in the on-current (Ion) level, and Ion/Ioff ratio. It has been shown that the TFET-based sensor shows a large deviation in the current level, and thus, change in Ion can also be considered as a suitable sensing parameter. Moreover, the impacts of device parameters (channel thickness and cavity length), process variability, and process-induced damage on the sensitivity of the biosensor have also been discussed.
Keywords :
biosensors; electrostatics; field effect transistors; molecular biophysics; p-n junctions; permittivity; sensitivity; TFET-based biosensor; analytical modeling study; device electrostatics; dielectric constant; dielectric-modulated tunnel-FET-based biosensor; electrical characteristics; label-free biomolecule detection; p-n-p-n tunnel held-effect transistor; process variability; process-induced damage; sensitivity analysis; voltage shift; Biological system modeling; Biosensors; Cavity resonators; Dielectric constant; Logic gates; MOSFET circuits; Sensitivity; Biosensor; dielectric-modulated field-effect transistor (FET) (DM-FET); label-free detection; nanogap; p-n-p-n; sensitivity; tunnel FET (TFET);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2208115