Title :
Optical Nonlinear Properties and Carrier Plasma Effect at Low Carrier Density in Silicon Wire Waveguides
Author :
Suda, Satoshi ; Ogasawara, Takeshi ; Shoji, Yuya ; Kintaka, Kenji ; Kawashima, Hitoshi ; Hasama, Toshifumi ; Ishikawa, Hiroshi
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
Ultrafast dynamics of amplitude and phase in a silicon wire waveguide are measured by a heterodyne pump probe technique at a wavelength of 1.55 μm. We determined the two-photon absorption coefficient and nonlinear refractive index to be βTPA = 0.43 cm/GW and n2 = 2.0 × 1018 m2/W, respectively. A theoretical analysis indicates that the index change due to the carrier plasma effect is linear to the carrier density when it is low as in the case of optical injection.
Keywords :
absorption coefficients; carrier density; elemental semiconductors; integrated optics; nonlinear optics; optical pumping; optical variables measurement; optical waveguides; phase measurement; photoexcitation; refractive index; silicon; two-photon processes; Si; amplitude measurement; carrier plasma effect; heterodyne pump-probe technique; low carrier density; nonlinear refractive index; optical injection; optical nonlinear properties; phase measurement; silicon wire waveguides; two-photon absorption coefficient; ultrafast dynamics; wavelength 1.55 mum; Nonlinear optics; Optical waveguides; Probes; Silicon; Ultrafast optics; Wires; Carrier plasma dispersion; optical nonlinear effect; silicon waveguides;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2011.2160714
