Spin pumping technique and its observation

Author

Lee, Je-Hyoung ; Rhie, Kungwon

Author_Institution

Dept. of Phys., Korea Univ., Chochiwon, South Korea

Volume

35

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

3784

Lastpage

3786

Abstract

Ferromagnetic Resonance (FMR) induced electron transport change was observed for the first time. Spin inversion caused by FMR affected magnetization vector, which generated a variation in planar Hall effect. In perpendicular Hall effect measurements, no sign of change was observed even at low temperatures. The mechanism of spin pumping technique and the reason of observation are explained in terms of Anisotropic Magnetoresistance (AMR) theory. This change of electron transport property can be applied to specific frequency sensing sensor, and direct conversion filter, since the resonance occurs only when resonance condition meets

Keywords

Hall effect; ferromagnetic resonance; magnetisation; magnetoresistance; anisotropic magnetoresistance; direct conversion microwave filter; electron transport; ferromagnetic resonance; frequency sensor; magnetization vector; perpendicular Hall effect; planar Hall effect; spin inversion; spin pumping; Anisotropic magnetoresistance; Electrons; Filters; Frequency conversion; Hall effect; Magnetic resonance; Magnetic sensors; Magnetic separation; Magnetization; Temperature sensors;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.800664

Filename

800664