• DocumentCode
    1260254
  • Title

    A Highly-Integrated 3–8 GHz Ultra-Wideband RF Transmitter With Digital-Assisted Carrier Leakage Calibration and Automatic Transmit Power Control

  • Author

    Shih, Horng-Yuan ; Wang, Chih-Wei

  • Author_Institution
    Dept. of Electr. Eng., Tamkang Univ., Taipei, Taiwan
  • Volume
    20
  • Issue
    8
  • fYear
    2012
  • Firstpage
    1357
  • Lastpage
    1367
  • Abstract
    This paper presents a highly-integrated 3-8 GHz ultra-wideband (UWB) RF transmitter implemented in a 1.2 V 0.13m CMOS technology. The transmitter integrates an analog baseband (PGAs and filter), an IQ modulator, a variable gain amplifier (VGA), a differential-to-single-ended amplifier, a power amplifier, as well as a transmitted signal strength indicator (TSSI). The RF VGA and the TSSI cooperate to perform an automatic transmit power control. The IQ modulator and an off-chip digital circuit implemented by a FPGA perform a carrier leakage calibration. Measured maximum output power and OP1 dB are -5 and +1.5 dBm, respectively. Measured worst carrier leakage suppression is 21 dB (before calibration) at 6.6 GHz. Measured worst sideband suppression is 29.1 dB at 7.6 GHz. The high linearity and accurate IQ modulation lead to an error vector magnitude (EVM) of -28 dB under the data rate of 480 Mb/s in WiMedia Mode 1. The entire transmitter consumes 66 mW under supply voltage of 1.2 V.
  • Keywords
    CMOS integrated circuits; calibration; field programmable gate arrays; microwave integrated circuits; power amplifiers; power control; radio transmitters; ultra wideband technology; CMOS technology; FPGA; IQ modulation; IQ modulator; RF VGA; TSSI; WiMedia Mode 1; analog baseband; automatic transmit power control; bit rate 480 Mbit/s; differential-to-single-ended amplifier; digital-assisted carrier leakage calibration; error vector magnitude; filter; frequency 3 GHz to 8 GHz; off-chip digital circuit; power 66 mW; power amplifier; size 0.13 m; transmitted signal strength indicator; ultra-wideband RF transmitter; variable gain amplifier; voltage 1.2 V; Baseband; Calibration; Electronics packaging; Gain; Modulation; Radio frequency; Transmitters; Carrier leakage calibration; RF transmitter; transmit power control; ultra-wideband (UWB);
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2011.2157842
  • Filename
    5934395