Switching mechanism of single domain particles in a two-dimensional array

Author

Pardavi-Horvath, M. ; Vertesy, G. ; Keszei, B. ; Vertesy, Z. ; McMichael, R.D.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., George Washington Univ., Washington, DC, USA

Volume

35

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

3871

Lastpage

3873

Abstract

The mechanism of switching of uniaxial, single domain, single crystalline epitaxial garnet particles on a 2D square array was investigated. The anisotropy field of the sample is 2 kOe, while the Gaussian switching field distribution is 280±85 Oe. The dominant contribution to the incoherent switching is from inhomogeneous internal fields and canted moments at the corners and edges, where the switching starts. The interaction field with the surrounding particles, reduced nucleation barriers at crystalline defects, thermal activation, and dynamical effects in FMR also contribute to the observed switching field and its standard deviation

Keywords

coercive force; ferromagnetic resonance; garnets; magnetic anisotropy; magnetic domains; magnetic epitaxial layers; magnetic particles; magnetic switching; magnetisation reversal; 2D square array; FMR; Gaussian switching field distribution; anisotropy field; canted moments; crystalline defects; dynamical effects; incoherent switching; inhomogeneous internal fields; reduced nucleation barriers; single crystalline epitaxial garnet particles; single domain particles; standard deviation; switching field; switching mechanism; thermal activation; two-dimensional array; Anisotropic magnetoresistance; Coercive force; Crystallization; Garnets; Magnetic anisotropy; Magnetic field measurement; Magnetic hysteresis; Magnetic switching; Perpendicular magnetic anisotropy; Shape;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.800692

Filename

800692