• DocumentCode
    126045
  • Title

    A method to realize hole-initiated multiplication in front-illuminated GaN avalanche photodiodes

  • Author

    Zheng JiYuan ; Wang Lai ; Hao Zhi Biao ; Luo Yi

  • Author_Institution
    Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
  • fYear
    2014
  • fDate
    16-23 Aug. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A front-illuminated GaN n-i-p avalanche photodiode (APD) with a 25 μm diameter mesa is proposed. The gain is demonstrated to be higher in n-i-p devices compared with conventional p-i-n ones by simulation based on Spinelli analytical model.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium compounds; semiconductor device models; wide band gap semiconductors; GaN; Spinelli analytical model; device design; front-illuminated n-i-p avalanche photodiode; gain; hole-initiated multiplication; size 25 mum; Absorption; Analytical models; Avalanche photodiodes; Charge carrier processes; Gallium nitride; PIN photodiodes; Performance evaluation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    General Assembly and Scientific Symposium (URSI GASS), 2014 XXXIth URSI
  • Conference_Location
    Beijing
  • Type

    conf

  • DOI
    10.1109/URSIGASS.2014.6929410
  • Filename
    6929410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=126045