Title :
A method to realize hole-initiated multiplication in front-illuminated GaN avalanche photodiodes
Author :
Zheng JiYuan ; Wang Lai ; Hao Zhi Biao ; Luo Yi
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Abstract :
A front-illuminated GaN n-i-p avalanche photodiode (APD) with a 25 μm diameter mesa is proposed. The gain is demonstrated to be higher in n-i-p devices compared with conventional p-i-n ones by simulation based on Spinelli analytical model.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium compounds; semiconductor device models; wide band gap semiconductors; GaN; Spinelli analytical model; device design; front-illuminated n-i-p avalanche photodiode; gain; hole-initiated multiplication; size 25 mum; Absorption; Analytical models; Avalanche photodiodes; Charge carrier processes; Gallium nitride; PIN photodiodes; Performance evaluation;
Conference_Titel :
General Assembly and Scientific Symposium (URSI GASS), 2014 XXXIth URSI
Conference_Location :
Beijing
DOI :
10.1109/URSIGASS.2014.6929410
