Domain structure of chemically thinned Fe-Si-B amorphous wires

Author

Takajo, Minom ; Yamasaki, Jiro ; Humphrey, Floyd B.

Author_Institution

Dept. of Electr. Eng., Nishinippon Inst. of Technol., Fukuoka, Japan

Volume

35

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

3904

Lastpage

3906

Abstract

In this study, we investigate the change in the magnetic properties of magnetostrictive Fe_77.5Si_7.5B₁₅ amorphous wires thinned by chemical etching focusing on domain structure. It is found that the re-entrant flux reversal characteristic is still maintained even in the wire chemically thinned to a diameter of 27 μm. The maze domain is observed on the wire thinned to a diameter of around 80 μm. Below this diameter, the wire shows bamboo domains. When thinned below 42 μm, the wire shows the single domain. The drastic change in the domain configuration due to thinning is explained by considering the very low anisotropy in the thinned wire caused by the decrease of anisotropy due to the etching of the outer shell. It is confirmed that the domain structure of the as-quenched 65 μm wire is quite different from that of the wire thinned to the same diameter

Keywords

amorphous magnetic materials; boron alloys; etching; iron alloys; magnetic anisotropy; magnetic domains; magnetostriction; silicon alloys; Fe_77.5Si_7.5B₁₅; bamboo domains; chemical etching; chemically thinned amorphous wires; domain structure; magnetostrictive wires; maze domain; re-entrant flux reversal; Amorphous magnetic materials; Amorphous materials; Anisotropic magnetoresistance; Chemicals; Etching; Magnetic anisotropy; Magnetic domains; Magnetic properties; Perpendicular magnetic anisotropy; Wire;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.800703

Filename

800703