Title :
The early history of the high electron mobility transistor (HEMT)
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
3/1/2002 12:00:00 AM
Abstract :
The early history of the high electron mobility transistor illustrates the way in which a new device idea occurs and is developed towards commercialization. The events which took place in our laboratory are described in this paper
Keywords :
HEMT integrated circuits; cryogenic electronics; high electron mobility transistors; microwave amplifiers; microwave field effect transistors; product development; HEMT; HEMT IC; cryogenic low-noise amplifier; depletion-mode HEMT; device commercialization; device development; enhancement-mode HEMT; high electron mobility transistor; inverted HEMT; Electrons; Gallium arsenide; HEMTs; Heterojunctions; History; MESFETs; MODFETs; Photonic band gap; Potential well; Superlattices;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
