• DocumentCode
    126049
  • Title

    CMOS 1:1 Transformer design for millimeter wave application

  • Author

    Jiang-An Han ; Zhi-Hui Kong ; Kai-Xue Ma ; Kiat-Seng Yeo

  • Author_Institution
    IC Design Centre of Excellence, Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2014
  • fDate
    16-23 Aug. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The key design aspects of CMOS transformer for millimeter wave applications are demonstrated in this paper. Two types of 1:1 CMOS transformers by broadside and edge coupling are simulated and compared based upon 65nm CMOS technology. The performance of transformers with various dimensions is discussed in millimeter-wave range. In particular, the S-parameter, impedance, quality factor etc. are illustrated from the view of practical usages. This paper provides a general guidance for on-chip transformer design in CMOS process.
  • Keywords
    CMOS integrated circuits; Q-factor; S-parameters; millimetre wave integrated circuits; transformers; CMOS 1:1 transformer design; CMOS technology; S-parameter; broadside coupling; edge coupling; millimeter wave application; on-chip transformer design; quality factor; size 65 nm; CMOS integrated circuits; CMOS technology; Conductors; Couplings; Image edge detection; Millimeter wave technology; Q-factor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    General Assembly and Scientific Symposium (URSI GASS), 2014 XXXIth URSI
  • Conference_Location
    Beijing
  • Type

    conf

  • DOI
    10.1109/URSIGASS.2014.6929414
  • Filename
    6929414