Title : 
CMOS 1:1 Transformer design for millimeter wave application
         
        
            Author : 
Jiang-An Han ; Zhi-Hui Kong ; Kai-Xue Ma ; Kiat-Seng Yeo
         
        
            Author_Institution : 
IC Design Centre of Excellence, Nanyang Technol. Univ., Singapore, Singapore
         
        
        
        
        
        
            Abstract : 
The key design aspects of CMOS transformer for millimeter wave applications are demonstrated in this paper. Two types of 1:1 CMOS transformers by broadside and edge coupling are simulated and compared based upon 65nm CMOS technology. The performance of transformers with various dimensions is discussed in millimeter-wave range. In particular, the S-parameter, impedance, quality factor etc. are illustrated from the view of practical usages. This paper provides a general guidance for on-chip transformer design in CMOS process.
         
        
            Keywords : 
CMOS integrated circuits; Q-factor; S-parameters; millimetre wave integrated circuits; transformers; CMOS 1:1 transformer design; CMOS technology; S-parameter; broadside coupling; edge coupling; millimeter wave application; on-chip transformer design; quality factor; size 65 nm; CMOS integrated circuits; CMOS technology; Conductors; Couplings; Image edge detection; Millimeter wave technology; Q-factor;
         
        
        
        
            Conference_Titel : 
General Assembly and Scientific Symposium (URSI GASS), 2014 XXXIth URSI
         
        
            Conference_Location : 
Beijing
         
        
        
            DOI : 
10.1109/URSIGASS.2014.6929414