DocumentCode
1260673
Title
A Spin-Diode Logic Family
Author
Friedman, Joseph S. ; Rangaraju, Nikhil ; Ismail, Yehea I. ; Wessels, Bruce W.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
Volume
11
Issue
5
fYear
2012
Firstpage
1026
Lastpage
1032
Abstract
While most modern computing technologies utilize Si complementary metal-oxide-semiconductor (CMOS) transistors and the accompanying CMOS logic family, alternative devices and logic families exhibit significant performance advantages. Though heretofore impractical, diode logic allows for the execution of logic circuits that are faster, smaller, and dissipate less power than conventional architectures. In this paper, magnetoresistive semiconductor heterojunctions are used to produce the first complete logic family based solely on diodes. We utilize the diode magnetoresistance states to create a binary logic family based on high and low currents in which a full range of logic functions is executed. The diode is used as a switch by manipulating its magnetoresistance with current-carrying wires that generate magnetic fields. Using this device structure, we present basis logic elements and complex circuits consisting of as few as 10% of the devices required in their conventional CMOS counterparts. This diode logic family is therefore an intriguing potential replacement for CMOS technology as Si scaling reaches its inherent limits.
Keywords
CMOS logic circuits; MOSFET; elemental semiconductors; magnetic logic; magnetoelectronics; semiconductor diodes; silicon; CMOS logic family; CMOS transistors; Si; binary logic family; complementary metal-oxide-semiconductor transistors; current-carrying wires; diode magnetoresistance states; logic circuits; logic functions; magnetic fields; magnetoresistive semiconductor heterojunctions; spin-diode logic family; CMOS integrated circuits; Logic gates; Magnetic fields; Magnetoresistance; Magnetoresistive devices; Semiconductor diodes; Wires; Beyond CMOS computing; diode logic; logic circuits; magnetoresistance; spintronics;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2012.2211892
Filename
6262485
Link To Document