Title :
Single Cooper-pair tunneling junctions using high-Tc superconducting materials
Author :
Kim, S.-J. ; Latyshev, Yu.I. ; Yamashita, T.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fDate :
9/1/1999 12:00:00 AM
Abstract :
We introduce the single electron (Cooper-pair) tunneling junctions using c-axis Bi2Sr2CaCu2O8+d (Bi-2212) superconducting single crystal whiskers. Focused-ion-beam (FIB) etching patterned the Bi-2212 whiskers. The fabricated small stacked junctions have in-plane area S smaller than <1 μm2 . The junctions showed current-voltage (I-V) characteristics with the periodic structure of current peaks. The stacking layered structure of Bi-2212 works as a multi-junction array which decreases the effective capacitance, CΣ=C0/N, where C0 is the capacitance of the junction and N is the layer number of elementary junctions. The period of current peaks of I-V curves corresponds to the charging energy of the single Cooper pair, 2Ec (=e2/CΣ)
Keywords :
Cooper pairs; Coulomb blockade; bismuth compounds; calcium compounds; capacitance; focused ion beam technology; high-temperature superconductors; sputter etching; strontium compounds; superconducting arrays; superconducting junction devices; superconductive tunnelling; whiskers (crystal); Bi-2212 whiskers; Bi2Sr2CaCu2O8; FIB etching; I-V characteristics; c-axis Bi2Sr2CaCu2O8+d superconducting single crystal whiskers; current peak periodic structure; effective capacitance; in-plane area; multi-junction array; single Cooper pair charging energy; single Cooper-pair tunneling junctions; single electron tunneling junctions; small stacked junctions; Bismuth; Capacitance; Electrons; Etching; Josephson junctions; Periodic structures; Stacking; Strontium; Superconducting epitaxial layers; Tunneling;
Journal_Title :
Magnetics, IEEE Transactions on
