Title :
InGaAsP-InP integrated twin-guide laser diode with grooved corner reflector fabricated by reactive ion beam etching
Author :
Jeon, Soo-Kun ; Kim, Moon-Jeong ; Cha, Jung-Ho ; Kwon, Young-Se
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fDate :
2/28/2002 12:00:00 AM
Abstract :
By introducing grooved comer reflectors at the cavity of an integrated twin-guide laser diode (ITG-LD), optical loss can be reduced, and travelling wave characteristics such as mode purity are simultaneously enhanced. The fabricated device shows single-mode operation at current levels up to 1.4 times threshold
Keywords :
III-V semiconductors; electric current; gallium arsenide; indium compounds; integrated optoelectronics; plasma materials processing; semiconductor lasers; sputter etching; waveguide lasers; ITG-LD; InGaAsP-InP; InGaAsP-InP integrated twin-guide laser diode; OEIC; current levels; current threshold; grooved comer reflectors; grooved corner reflector; integrated twin-guide laser diode cavity; mode purity; optoelectronic integrated circuit; reactive ion beam etching; single-mode operation; travelling wave characteristic;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020155
