Title :
Polarisation insensitive InGaAs/InGaAsP electro-absorption intensity modulator using quantum well intermixing process
Author :
Ng, S.L. ; Lim, H.S. ; Lam, Y.L. ; Chan, Y.C. ; Ooi, B.S. ; Aimez, V. ; Beauvais, J. ; Beerens, J.
Author_Institution :
Photonics Res. Group, Nanyang Technol. Univ., Singapore
fDate :
2/28/2002 12:00:00 AM
Abstract :
A quantum well intermixing process for the fabrication of polarisation insensitive electro-absorption intensity modulators on an InGaAs/InGaAsP heterostructure is reported. This technique is based on low-energy arsenic and phosphorus ion implantation
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; ion implantation; optical communication equipment; optical fibre communication; semiconductor quantum wells; InGaAs-InGaAsP; InGaAs/InGaAsP; electro-absorption intensity modulator; low-energy ion implantation; optical fibre communications; quantum well intermixing process; waveguide based quantum well optical modulators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020151
