• DocumentCode
    1261314
  • Title

    Defect dependent memory switching in amorphous silicon alloys [a-Si xC1-x:H]

  • Author

    Shannon, J.M. ; Gateru, R.G. ; Gerstner, E.G.

  • Author_Institution
    Sch. of Electronics, Comput. & Math., Surrey Univ., Guildford, UK
  • Volume
    38
  • Issue
    5
  • fYear
    2002
  • fDate
    2/28/2002 12:00:00 AM
  • Firstpage
    249
  • Lastpage
    250
  • Abstract
    It is shown that memory switching in amorphous silicon alloys is affected by ion bombardment. In particular, ion damage lowers the voltage required to form devices and switch them into the on-state. This technique enables optimised non-volatile memory devices to be made with improved switching ratios
  • Keywords
    amorphous semiconductors; electrical conductivity transitions; hydrogen; ion beam effects; metal-semiconductor-metal structures; semiconductor storage; silicon compounds; wide band gap semiconductors; MSM structure; SixC1-x:H; a-SixC1-x:H; defect dependent memory switching; forming voltage; ion bombardment; ion damage; off-state current; optimised nonvolatile memory devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020160
  • Filename
    990225
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1261314