Title :
Defect dependent memory switching in amorphous silicon alloys [a-Si xC1-x:H]
Author :
Shannon, J.M. ; Gateru, R.G. ; Gerstner, E.G.
Author_Institution :
Sch. of Electronics, Comput. & Math., Surrey Univ., Guildford, UK
fDate :
2/28/2002 12:00:00 AM
Abstract :
It is shown that memory switching in amorphous silicon alloys is affected by ion bombardment. In particular, ion damage lowers the voltage required to form devices and switch them into the on-state. This technique enables optimised non-volatile memory devices to be made with improved switching ratios
Keywords :
amorphous semiconductors; electrical conductivity transitions; hydrogen; ion beam effects; metal-semiconductor-metal structures; semiconductor storage; silicon compounds; wide band gap semiconductors; MSM structure; SixC1-x:H; a-SixC1-x:H; defect dependent memory switching; forming voltage; ion bombardment; ion damage; off-state current; optimised nonvolatile memory devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020160
