A high performance monolithic In/sub 0.53/Ga/sub 0.47/As voltage-tunable transimpedance amplifier

Author

Lo, D.C.W. ; Chung, Y.K. ; Forrest, S.R.

Author_Institution

Dept. of Electr. Eng. & Mater. Sci., Univ. of Southern California, Los Angeles, CA, USA

Volume

2

Issue

9

fYear

1990

Firstpage

675

Lastpage

677

Abstract

The fabrication and performance of the first monolithically integrated In/sub 0.53/Ga/sub 0.47/As JFET voltage-tunable transimpedance amplifier for use in InP-based optoelectronic integrated circuits are reported. A narrow-gate transistor is used as an active feedback resistor. The two-stage voltage amplifier has a voltage gain of 10.7 and a bandwidth of 350 MHz. The closed-loop transimpedance of the amplifier is tunable from 10 to 24 k Omega by controlling the gate bias of the feedback transistor.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; tuning; 350 MHz; In/sub 0.53/Ga/sub 0.47/As; InP; JFET; active feedback resistor; closed-loop transimpedance; gate bias; junction field effect transistors; monolithically integrated; narrow-gate transistor; optoelectronic integrated circuits; tunable; two-stage voltage amplifier; voltage-tunable transimpedance amplifier; Bandwidth; Diodes; Feedback; Impedance; Inductance; Monolithic integrated circuits; Optical amplifiers; Preamplifiers; Resistors; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.59347

Filename

59347