Title :
A high performance monolithic In/sub 0.53/Ga/sub 0.47/As voltage-tunable transimpedance amplifier
Author :
Lo, D.C.W. ; Chung, Y.K. ; Forrest, S.R.
Author_Institution :
Dept. of Electr. Eng. & Mater. Sci., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
The fabrication and performance of the first monolithically integrated In/sub 0.53/Ga/sub 0.47/As JFET voltage-tunable transimpedance amplifier for use in InP-based optoelectronic integrated circuits are reported. A narrow-gate transistor is used as an active feedback resistor. The two-stage voltage amplifier has a voltage gain of 10.7 and a bandwidth of 350 MHz. The closed-loop transimpedance of the amplifier is tunable from 10 to 24 k Omega by controlling the gate bias of the feedback transistor.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; tuning; 350 MHz; In/sub 0.53/Ga/sub 0.47/As; InP; JFET; active feedback resistor; closed-loop transimpedance; gate bias; junction field effect transistors; monolithically integrated; narrow-gate transistor; optoelectronic integrated circuits; tunable; two-stage voltage amplifier; voltage-tunable transimpedance amplifier; Bandwidth; Diodes; Feedback; Impedance; Inductance; Monolithic integrated circuits; Optical amplifiers; Preamplifiers; Resistors; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
