Title :
High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm
Author :
Kumar, V. ; Lu, W. ; Khan, M.Asif ; Schwindt, R. ; Kuliev, A. ; Simin, G. ; Yang, J. ; Asif Khan, M. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
2/28/2002 12:00:00 AM
Abstract :
Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) having record high transconductance of over 400 mS/mm have been fabricated on sapphire substrates. These 0.25 μm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm, unity gain cutoff frequency (fT) of 85 GHz, and maximum frequency of oscillation (fmax) of 151 GHz. The fT of 85 GHz and fmax of 151 GHz are the highest ever reported values for 0.25 μm gate-length GaN-based HEMTs
Keywords :
III-V semiconductors; MOCVD coatings; aluminium compounds; gallium compounds; high electron mobility transistors; sapphire; wide band gap semiconductors; 0.25 micron; 151 GHz; 85 GHz; Al2O3; AlGaN-GaN; AlGaN/GaN high electron mobility transistor; drain current density; maximum frequency of oscillation; metalorganic chemical vapour deposition; sapphire substrate; transconductance; unity gain cutoff frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020178
