Title :
Improving contact performances of Al(Al/Pd) and i-a-SiGe:H interface using an additional very thin Sb layer
Author :
Lin, Cha-Shin ; Yeh, Rong-Hwei ; Li, Inn-Xin ; Hong, Jyh-Wong
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
fDate :
2/28/2002 12:00:00 AM
Abstract :
A very thin Sb layer, which is an n-type dopant for i-a-SiGe:H and was inserted between the Al or Al/Pd and i-a-SiGe:H layers, was successfully employed to reduce the specific contact resistance (Rsc) of these two interfaces. The Rsc of the Al(Al/Pd) and i-a-SiGe:H interface could be reduced from 4.42 (6.23×102) Ω-cm2 to 5×10-3 (4×10-3) Ω-cm2 by inserting a very thin Sb layer and using a proper low-temperature (<300°C) annealing process. Experimental results indicated that these two proposed interfaces could be used to enhance the current drivability of a Schottky barrier a-SiGe thin-film transistor
Keywords :
Ge-Si alloys; Schottky barriers; aluminium; amorphous semiconductors; annealing; antimony; contact resistance; hydrogen; palladium; thin film transistors; 0 to 300 degC; Al-Pd-Sb-SiGe:H; Al-Sb-SiGe:H; Al/Pd-Sb-SiGe:H; Schottky barrier; contact performances; current drivability; low-temperature annealing process; n-type dopant; specific contact resistance; thin-film transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020157
