Title :
Low-temperature polysilicon TFT with counter-doped lateral body terminal
Author :
Lee, Min-Cheol ; Juhn-Suk Yoo ; Han, Min-Koo
Author_Institution :
Sch. of Electr. Eng. (50), Seoul Nat. Univ., South Korea
fDate :
2/28/2002 12:00:00 AM
Abstract :
A low-temperature polysilicon thick film transistor (TFT) employing a counter-doped lateral body terminal (LBT) is proposed and fabricated to suppress the kink current and to enhance the stability of polysilicon in the TFT. In the experiment, the LBT effectively reduced the kink effect by collecting the counter-polarity carriers
Keywords :
elemental semiconductors; silicon; thin film transistors; Si; counter-doped lateral body terminal; kink current; low-temperature polysilicon thin film transistor; stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020152
