Improvement of GMR characteristics of spin-valve films with a novel free layer

Author

Mizuguchi, Tetsuya ; Miyauchi, Teiichi

Author_Institution

Res. Center, Sony Corp., Yokohama, Japan

Volume

35

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

2598

Lastpage

2600

Abstract

In order to obtain a large change in resistance, a free layer structure of Ta/NiFeTa/CoFe in spin-valve films was examined. The magnetoresistance properties and the thermal stabilities varied with the resistivity of NiFeTa and the crystallographic texture of the spin-valve film. For the structure of glass/Ta[5 nm]/(NiFe)_88.5Ta_11.5[5 nm]/CoFe[2.5 nm]/Cu[2.75 nm]/CoFe[2.5 nm]/IrMn[6 nm]/Ta[5 nm], the change in sheet resistance of 2.3 Ω/□ (MR ratio of 12.3%) and 2.0 Ω/□ (9.5%) were obtained before and after annealing at 280°C for 5 hours, respectively

Keywords

annealing; cobalt alloys; giant magnetoresistance; iron alloys; magnetic heads; nickel alloys; spin valves; tantalum; tantalum alloys; thermal stability; 280 C; Ta-NiFeTa-CoFe; annealing; crystallographic texture; free layer; giant magnetoresistance; reading head; resistivity; sheet resistance; spin valve film; thermal stability; Annealing; Atomic force microscopy; Conductivity; Giant magnetoresistance; Glass; Magnetic films; Magnetic heads; Magnetic properties; Microstructure; Plasma temperature;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.800905

Filename

800905