Title :
RF GaN HEMT Sensors for Detection of Caustic Chemicals
Author :
Son, Kyung-Ah ; Yang, Baohua ; Prokopuk, Nicholas ; Moon, Jeong S. ; Liao, Anna ; Katona, Thomas M. ; Khan, M.Asif
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
For future wireless sensor network applications, high-speed RF GaN HEMTs (high electron mobility transistor) are investigated for toxic industrial chemical detection, for the first time. RF GaN HEMTs with a Pt-based gate metal show reliable, repeatable, and distinctive responses toward Cl2 gas and HCl vapor at room temperature.
Keywords :
III-V semiconductors; chemical sensors; chlorine compounds; gallium compounds; high electron mobility transistors; hydrogen compounds; wide band gap semiconductors; wireless sensor networks; Cl2; GaN; HCl; Pt; RF HEMT sensor; caustic chemical detection; high electron mobility transistor; temperature 293 K to 298 K; toxic industrial chemical detection; wireless sensor network; Chemical sensors; Gallium nitride; HEMTs; Logic gates; Radio frequency; Toxic chemicals; Chemical; Cl$_{2}$; GaN; HCl; HEMT; RF; microsensor; toxic industrial chemical;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2011.2160978
