Voltage Tunable Dual-Band Quantum-Well Infrared Photodetector for Third-Generation Thermal Imaging

Author

Hostut, M. ; Kilic, A. ; Sakiroglu, S. ; Ergun, Y. ; Sokmen, I.

Author_Institution

Dept. of Secondary Educ. of Sci. & Math., Akdeniz Univ., Antalya, Turkey

Volume

23

Issue

19

fYear

2011

Firstpage

1370

Lastpage

1372

Abstract

We investigate the theoretical calculations of the voltage tunable dual-band quantum-well infrared photodetector (QWIP) in the long and very long wavelength infrared range (LWIR and VLWIR). The detector consists of two serially connected GaAs/AlGaAs stacks which have spectral responses of 8.4- and 14- μm wavelengths, respectively. The peak responsivity wavelength of the stacks shifts from 8.4 to 14 μm as the bias voltage is increased.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; infrared imaging; optical tuning; photodetectors; quantum well devices; semiconductor quantum wells; GaAs-AlGaAs; long wavelength infrared range; spectral responses; third-generation thermal imaging; voltage tunable dual-band quantum-well infrared photodetector; wavelength 8.4 mum to 14 mum; Dark current; Detectors; Dual band; Gallium arsenide; Photoconductivity; Photodetectors; Temperature dependence; Dark current; dual-band infrared photodetector; photocurrent; voltage-tunable;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2160993

Filename

5936099