Progress and outlook for MRAM technology

Author

Tehrani, S. ; Slaughter, J.M. ; Chen, E. ; Durlam, M. ; Shi, J. ; DeHerren, M.

Author_Institution

Phys. Sci. Res. Labs., Motorola Labs., USA

Volume

35

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

2814

Lastpage

2819

Abstract

We summarize the features of existing semiconductor memories and compare them to Magnetoresistive Random Access Memory (MRAM),a semiconductor memory with magnetic bits for nonvolatile storage. MRAM architectures based on Giant Magnetoresistance (GMR) and Magnetic Tunnel Junction (MTJ) cells are described. This paper will discuss our progress on improving the material structures, memory bits, thermal stability of the bits, and competitive architectures for GMR and MTJ based MRAM memories as well as the potential of these memories in the commercial memory market

Keywords

giant magnetoresistance; magnetoresistive devices; random-access storage; reviews; thermal stability; tunnelling; GMR based MRAM memories; MRAM technology; MTJ based MRAM memories; competitive architectures; giant magnetoresistance; magnetic bits; magnetic tunnel junction; magnetoresistive random access memory; material structures; memory bits; memory market; nonvolatile storage; semiconductor memories; thermal stability; Giant magnetoresistance; Magnetic materials; Magnetic semiconductors; Magnetic tunneling; Nonvolatile memory; Potential well; Random access memory; Semiconductor materials; Semiconductor memory; Thermal stability;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.800991

Filename

800991