Title :
Demonstration of a four state sensing scheme for a single Pseudo-Spin Valve GMR bit
Author :
Zhang, Ruili ; Hassoun, Marwan M. ; Black, William C., Jr. ; Das, Bodhisattva ; Wong, Kae A.
Author_Institution :
Dept. of ECPE, Iowa State Univ., Ames, IA, USA
fDate :
9/1/1999 12:00:00 AM
Abstract :
A simple and fast method for sensing four states from a single Pseudo-Spin Valve GMR device is presented. Four state sensing shows promise of doubling the potential bit density of Magnetic Random Access Memory (MRAM) and related devices. A new two step method to detect the GMR bit information has been developed here that is simple to implement and which easily allows for compensation of rapid self-heating effects
Keywords :
giant magnetoresistance; magnetic storage; magnetoresistive devices; random-access storage; spin valves; GMR bit information; MRAM; bit density; compensation; four state sensing scheme; magnetic random access memory; rapid self-heating effects; single pseudo-spin valve GMR bit; single pseudo-spin valve GMR device; Clocks; Instruments; Logic devices; Magnetic devices; Magnetic materials; Magnetization; Programmable logic devices; Random access memory; Read-write memory; Valves;
Journal_Title :
Magnetics, IEEE Transactions on
