Room-temperature and low-field magnetoresistance of La-Sr-Mn-O thin films

Author

Choi, Kyung-Ku ; Taniyama, Tomoyasu ; Yamazaki, Yohtaro

Author_Institution

Dept. of Innovative & Eng. Mater., Tokyo Inst. of Technol., Japan

Volume

35

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

2844

Lastpage

2846

Abstract

Thin films of La_0.71Sr_0.29Mn_1.01O _3-δ have been sputtered onto polycrystalline YSZ, (110) sapphire, YSZ buffered Si and (100) SrTiO₃ substrates. Microstructure and magnetotransport properties of these films are investigated. Except for the epitaxial film on (100) SrTiO₃ substrate, granular structures with 20-100 nm grains in size are observed. In the granular films, resistance changes about 0.5% within a field of 100 Oe are observed at room-temperature. The resistivity and the hysteretic behavior of the magnetoresistance are varied with substrate material. The low-field magnetoresistance is related to the microstructure and the magnetization process

Keywords

colossal magnetoresistance; ferromagnetic materials; grain size; granular materials; lanthanum compounds; magnetic epitaxial layers; magnetic thin films; magnetisation; nanostructured materials; sputtered coatings; strontium compounds; (100) SrTiO₃ substrates; (110) sapphire; 20 to 100 nm; Al₂O₃; La-Sr-Mn-O thin films; La_0.71Sr_0.29Mn_1.01O _3-δ; La_0.71Sr_0.29Mn_1.01O₃; Si; SrTiO₃; Y₂O₃-ZrO₂; YSZ buffered Si; epitaxial film; grain size; granular structures; hysteretic behavior; low-field magnetoresistance; magnetization process; magnetotransport properties; microstructure; polycrystalline YSZ; resistance changes; room-temperature; sputtered film; Conductivity; Hysteresis; Magnetic materials; Magnetic properties; Magnetoresistance; Microstructure; Semiconductor thin films; Sputtering; Strontium; Substrates;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.800999

Filename

800999