• DocumentCode
    1262501
  • Title

    Annealing effect on magnetic characteristics on (La,Sr)MnO3 sputtered films

  • Author

    Namikawa, Tatsuo ; Kaneta, Kumiko ; Matsushita, Nobuhiro ; Nakagawa, Shigeki ; Naoe, Masahiko

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
  • Volume
    35
  • Issue
    5
  • fYear
    1999
  • fDate
    9/1/1999 12:00:00 AM
  • Firstpage
    2850
  • Lastpage
    2852
  • Abstract
    A perovskite type of (La,Sr)MnO3 films were deposited on SiO2/Si substrates with amorphous surface by using the facing targets sputtering apparatus. Although the film as-deposited at P(O2) of 0.3 mTorr was not fully crystallized and the MR ratio was as small as 0.03% at the applied field of 5 kOe, it increased up to 2.5% for the film post-annealed at 850°C in air for 10 min. The partial O2 pressure P(O2) strongly affected their crystallinity as well as the Mn content CMn. The film as deposited at P(O2) of 0.03 mTorr was composed of crystallites with excellent (100) orientation at relatively low substrate temperature Ts up to 500°C and the large MR ratio of 3.8% was attained even at room-temperature measurement. Since this MR response exhibits excellent linearity, these LSMO films seem to be applied for magnetic sensor devices. It is clarified that the annealing process in preparation of LSMO film effectively increases the MR ratio of the film with insufficient crystallinity, and is not effective for the fully crystallized film
  • Keywords
    annealing; colossal magnetoresistance; lanthanum compounds; magnetic hysteresis; magnetic thin films; sputter deposition; strontium compounds; LaSrMnO3; Mn content; Si; SiO2; annealing; crystallinity; facing targets sputtering; magnetic sensor devices; magnetoresistance; partial O2 pressure; perovskite; sputtered films; substrate temperature; Amorphous magnetic materials; Amorphous materials; Annealing; Crystallization; Linearity; Magnetic films; Semiconductor films; Sputtering; Substrates; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.801001
  • Filename
    801001