Title :
Magnetoresistance in La0.8Sr0.2MnO3-δ biepitaxial grain boundary junction
Author :
Lee, Sang-Suk ; Do-Guwn Hwan ; Park, Chang-Man ; Rhee, J.R.
Author_Institution :
Dept. of Phys., Sangji Univ., Wonju, South Korea
fDate :
9/1/1999 12:00:00 AM
Abstract :
La0.8Sr0.2MnO3-δ (LSMO) films with 45° in-plane grain boundaries were fabricated using two types of biepitaxial multilayers. The low field MR (magnetoresistance) ratio of 32% at 77 K is a significant value due to the artificial grain boundary effect and it maybe useful for developing spin-dependent tunneling junctions using a LSMO biepitaxial grain boundary. The magnetoresistive properties at two different magnetic fields, parallel or perpendicular to the grain boundary junction, can be interpreted by the different ferromagnetic spin-polarization ordering in ab-plane
Keywords :
colossal magnetoresistance; ferromagnetic materials; grain boundaries; lanthanum compounds; magnetic epitaxial layers; magnetic multilayers; strontium compounds; tunnelling; 45° in-plane grain boundaries; 77 K; La0.8Sr0.2MnO3; biepitaxial grain boundary junction; ferromagnetic spin-polarization ordering; magnetoresistance; spin-dependent tunneling junctions; thin films; Antiferromagnetic materials; Colossal magnetoresistance; Crystalline materials; Grain boundaries; Magnetic field measurement; Magnetic films; Magnetic materials; Physics; Strontium; Temperature;
Journal_Title :
Magnetics, IEEE Transactions on
