Title :
MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode
Author :
Yamanaka, Hideaki ; Saito, Kesami ; Takanashi, Koki ; Fujimori, Hiroyasu
Author_Institution :
Read-Rite SMI Co., Osaka, Japan
fDate :
9/1/1999 12:00:00 AM
Abstract :
The influence of a nonmagnetic metal (Cu) layer between the barrier and the electrode in ferromagnetic tunneling junctions on magnetoresistance has been investigated. MR decreases with increasing the Cu layer thickness (tCu), however, the variations in MR at 77 K with temperature and bias voltage become smaller with increasing tCu
Keywords :
giant magnetoresistance; magnetic multilayers; tunnelling; 77 K; Cu; bias voltage dependence; ferromagnetic tunneling junctions; layer thickness; magnetoresistance; magnon excitations; nonmagnetic metal layer influence; temperature dependence; Artificial intelligence; Electrodes; Insulation; Ion beams; Iron; Magnetic tunneling; Sputtering; Temperature sensors; Tunneling magnetoresistance; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on
