DocumentCode :
1262596
Title :
Thermal stability of spin dependent tunneling junctions pinned with IrMn
Author :
Wang, D. ; Tondra, M. ; Nordman, C. ; Daughton, J.M.
Author_Institution :
Nonvolatile Electron. Inc., Eden Prairie, MN, USA
Volume :
35
Issue :
5
fYear :
1999
fDate :
9/1/1999 12:00:00 AM
Firstpage :
2886
Lastpage :
2888
Abstract :
Spin dependent tunneling junctions have been fabricated by rf sputtering and photolithography patterning. The junctions have adequate thermal stability to withstand the high temperatures encountered in backend microelectronics integration processing with on-chip IC (from 275 to 300°C for one hour) and standard component packaging (200°C for six hours). These materials also have the potential for long term device operation at high temperatures of at least 150°C-there is little change in the properties upon additional annealing at 150°C for 510 hours, after being pre-annealed at 275°C for two hours. With excellent intrinsic physical properties such as a high JMR ratio of >20%, a low coercivity of <10 Oe, a high resistance, a wide bandwidth, and room temperature operation, SDT materials are superior to other technologies for low field, low power, and low cost applications. With the ability of microelectronics fabrication processing and the compatibility of backend integrating process with IC on-chip, this new technology holds great potential for commercialization in magnetic field sensing devices
Keywords :
coercive force; giant magnetoresistance; iridium alloys; magnetic annealing; magnetic multilayers; magnetic sensors; manganese alloys; photolithography; spin valves; sputter deposition; sputtered coatings; thermal stability; tunnelling; 150 C; 275 to 300 C; IC on-chip; IrMn; IrMn pinned junctions; RF sputtering; backend integrating process; high resistance; low coercivity; magnetic annealing; magnetic field sensing devices; magnetoresistance; photolithography patterning; room temperature operation; spin dependent tunneling junctions; thermal stability; wide bandwidth; Annealing; Bandwidth; Coercive force; Integrated circuit packaging; Lithography; Microelectronics; Sputtering; Temperature; Thermal stability; Tunneling;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.801014
Filename :
801014
Link To Document :
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