DocumentCode
1262620
Title
Modeling the effects of domains in magnetic tunnel junctions
Author
Wong, Pak-Kin ; Evetts, Jan E. ; Blamire, Mark G.
Author_Institution
Dept. of Mater. Sci. & Metall., Cambridge Univ., UK
Volume
35
Issue
5
fYear
1999
fDate
9/1/1999 12:00:00 AM
Firstpage
2898
Lastpage
2900
Abstract
A model based on the domain structure of the electrodes in ferromagnet-insulator-ferromagnet tunnel junctions is derived. It provides an explicit expression of the junction magnetoresistance (MR) in terms of the magnetization of the ferromagnetic layers. The response in magnetic field of junctions with very high and very low MR are simulated, and the lack of fringing field coupling is proposed to be a reason for low MR. The effect of temperature on junction MR is discussed briefly in the context of the model
Keywords
MIM structures; giant magnetoresistance; magnetic domains; magnetic multilayers; tunnelling; domain effects modelling; ferromagnet-insulator-ferromagnet tunnel junction; high magnetoresistance; junction magnetoresistance; low magnetoresistance; magnetic tunnel junctions; magnetization; Context modeling; Couplings; Electrodes; Magnetic domains; Magnetic tunneling; Magnetization; Magnetoresistance; Materials science and technology; Plasma temperature; Predictive models;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.801018
Filename
801018
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