Title :
Anisotropy effect of magnetoresistance in spin polarized tunneling
Author :
Chang, Ching-Ray ; Chen, Sui-Pin
Author_Institution :
Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
9/1/1999 12:00:00 AM
Abstract :
We calculate the influence of single-ion anisotropy in spin polarized tunneling and conclude that the tunneling magnetoresistance ratio increases for lower barrier height with the increasing anisotropy parameter. In particular, the optimal alignment of the ferromagnetic layers, yielding the largest TMR ratio is proposed
Keywords :
electron spin polarisation; ferromagnetic materials; magnetic anisotropy; magnetic multilayers; magnetoresistance; tunnelling; anisotropy effect; anisotropy parameter; ferromagnetic layers; lower barrier height; optimal alignment; single-ion anisotropy; spin polarized tunneling; tunneling magnetoresistance ratio; Anisotropic magnetoresistance; Electrodes; Electrons; Giant magnetoresistance; Iron; Magnetic anisotropy; Magnetic separation; Perpendicular magnetic anisotropy; Polarization; Tunneling magnetoresistance;
Journal_Title :
Magnetics, IEEE Transactions on
