DocumentCode
1262649
Title
Anisotropy effect of magnetoresistance in spin polarized tunneling
Author
Chang, Ching-Ray ; Chen, Sui-Pin
Author_Institution
Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan
Volume
35
Issue
5
fYear
1999
fDate
9/1/1999 12:00:00 AM
Firstpage
2913
Lastpage
2915
Abstract
We calculate the influence of single-ion anisotropy in spin polarized tunneling and conclude that the tunneling magnetoresistance ratio increases for lower barrier height with the increasing anisotropy parameter. In particular, the optimal alignment of the ferromagnetic layers, yielding the largest TMR ratio is proposed
Keywords
electron spin polarisation; ferromagnetic materials; magnetic anisotropy; magnetic multilayers; magnetoresistance; tunnelling; anisotropy effect; anisotropy parameter; ferromagnetic layers; lower barrier height; optimal alignment; single-ion anisotropy; spin polarized tunneling; tunneling magnetoresistance ratio; Anisotropic magnetoresistance; Electrodes; Electrons; Giant magnetoresistance; Iron; Magnetic anisotropy; Magnetic separation; Perpendicular magnetic anisotropy; Polarization; Tunneling magnetoresistance;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.801023
Filename
801023
Link To Document