Title :
Dependence of tunneling magnetoresistance on CoFe interfacial layer thickness in NiFe/Al2O3/NiFe tunnel junctions
Author :
Park, B.G. ; Lee, T.D.
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fDate :
9/1/1999 12:00:00 AM
Abstract :
Magnetic tunnel junctions of Ta/Ni81Fe19/Fe 50Mn50/Ni81Fe19/Co50 Fe50/Al2O3/Co50Fe 50/Ni81Fe19 were fabricated by a magnetron sputtering system. We have studied the change of tunneling magnetoresistance (MR) ratio and junction resistance as a function of CoFe interfacial layer thickness. The MR ratio rapidly increased and slowly decreased as the CoFe layer thickness increased. The junction resistance increased with the introduction of CoFe layer. The increase is due to more uniform Al layer formation on a CoFe layer than a NiFe layer
Keywords :
MIM structures; alumina; cobalt alloys; ferromagnetic materials; iron alloys; magnetic multilayers; magnetoresistance; nickel alloys; oxidation; sputtered coatings; tunnelling; Al layer formation; Al2O3; Co50Fe50; CoFe interfacial layer thickness; Fe50Mn50; Ni81Fe19; NiFe/Al2O3/NiFe tunnel junctions; Ta; junction resistance; magnetic tunnel junctions; magnetron sputtering system; plasma oxidation; surface roughness; tunneling magnetoresistance; Artificial intelligence; Electrodes; Electrons; Magnetic tunneling; Materials science and technology; Oxidation; Plasma temperature; Polarization; Sputtering; Tunneling magnetoresistance;
Journal_Title :
Magnetics, IEEE Transactions on
