Title :
Analysis of angular dependence of GMR profiles in spin-valves using the double domain model
Author :
Kim, D.Y. ; Kim, C.G. ; Park, B.S. ; Hwang, D.G. ; Lee, S.S.
Author_Institution :
Div. of Telecommun. Syst., Hyundai Electron. Ind. Co. Ltd., Kyoungki, South Korea
fDate :
9/1/1999 12:00:00 AM
Abstract :
The magnetoresistance (MR) in the spin-valve structure is analyzed on the basis of an equivalent circuit, in which two ferromagnetic layers representing the anisotropic magnetoresistance (AMR) effect are parallelly connected and the giant magnetoresistance (GMR) effect are serially connected. The measured MR profiles at angles of θ=0°, 60° and 90° in NiO(30 nm)/NiFe(5 nm)/Cu(4 nm)/NiFe(5 nm)/Ta(5 nm) spin-valve sample are in good agreement with calculated ones using the double domain model. As the magnetizing angle θ increases, the AMR effect causing negative MR becomes significant. The AMR and GMR components in a spin-valve structure are decomposed using the double domain model
Keywords :
copper; equivalent circuits; ferromagnetic materials; giant magnetoresistance; iron alloys; magnetic domains; magnetic multilayers; nickel alloys; nickel compounds; spin valves; tantalum; 30 nm; 4 nm; 5 nm; GMR profiles; NiO-NiFe-Cu-NiFe-Ta; NiO/NiFe/Cu/NiFe/Ta spin-valve sample; angular dependence; anisotropic magnetoresistance; double domain model; equivalent circuit; ferromagnetic layers; giant magnetoresistance; magnetizing angle; magnetoresistance; spin-valve structure; spin-valves; Anisotropic magnetoresistance; Equivalent circuits; Giant magnetoresistance; Magnetic analysis; Magnetic anisotropy; Magnetic field measurement; Magnetic separation; Magnetization; Perpendicular magnetic anisotropy; Physics;
Journal_Title :
Magnetics, IEEE Transactions on
