Analysis of angular dependence of GMR profiles in spin-valves using the double domain model

Author

Kim, D.Y. ; Kim, C.G. ; Park, B.S. ; Hwang, D.G. ; Lee, S.S.

Author_Institution

Div. of Telecommun. Syst., Hyundai Electron. Ind. Co. Ltd., Kyoungki, South Korea

Volume

35

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

2934

Lastpage

2936

Abstract

The magnetoresistance (MR) in the spin-valve structure is analyzed on the basis of an equivalent circuit, in which two ferromagnetic layers representing the anisotropic magnetoresistance (AMR) effect are parallelly connected and the giant magnetoresistance (GMR) effect are serially connected. The measured MR profiles at angles of θ=0°, 60° and 90° in NiO(30 nm)/NiFe(5 nm)/Cu(4 nm)/NiFe(5 nm)/Ta(5 nm) spin-valve sample are in good agreement with calculated ones using the double domain model. As the magnetizing angle θ increases, the AMR effect causing negative MR becomes significant. The AMR and GMR components in a spin-valve structure are decomposed using the double domain model

Keywords

copper; equivalent circuits; ferromagnetic materials; giant magnetoresistance; iron alloys; magnetic domains; magnetic multilayers; nickel alloys; nickel compounds; spin valves; tantalum; 30 nm; 4 nm; 5 nm; GMR profiles; NiO-NiFe-Cu-NiFe-Ta; NiO/NiFe/Cu/NiFe/Ta spin-valve sample; angular dependence; anisotropic magnetoresistance; double domain model; equivalent circuit; ferromagnetic layers; giant magnetoresistance; magnetizing angle; magnetoresistance; spin-valve structure; spin-valves; Anisotropic magnetoresistance; Equivalent circuits; Giant magnetoresistance; Magnetic analysis; Magnetic anisotropy; Magnetic field measurement; Magnetic separation; Magnetization; Perpendicular magnetic anisotropy; Physics;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.801034

Filename

801034