Title :
An improved structure for multilevel magnetoresistive random access memory
Author :
Jeong, Won-Cheol ; Lee, Byung-II ; Joo, Seung-Ki
Author_Institution :
Coll. of Eng., Seoul Nat. Univ., South Korea
fDate :
9/1/1999 12:00:00 AM
Abstract :
A new multilevel magnetoresistive random access memory (MRAM) has been developed. It consists of one sensing layer per storage layer. In this work, a MRAM with four different memory states has been demonstrated. With the NiFe/Cu/NiFeCo/Cu/NiFe/Cu/Co system, four distinguishable memory states can be obtained by applying a proper external magnetic field. It has been confirmed that the multilevel MRAM using pseudo spin valve MRAM mode alone can be established just with the adoption of one sensing layer per storage layer
Keywords :
cobalt; cobalt alloys; copper; ferromagnetic materials; iron alloys; magnetic multilayers; magnetic storage; nickel alloys; random-access storage; spin valves; MRAM; NiFe-Cu-NiFeCo-Cu-NiFe-Cu-Co; NiFe/Cu/NiFeCo/Cu/NiFe/Cu/Co system; external magnetic field; memory states; multilevel magnetoresistive random access memory; pseudo spin valve MRAM mode; sensing layer; storage layer; structure; Argon; Educational institutions; Enhanced magnetoresistance; Giant magnetoresistance; Magnetic cores; Magnetic fields; Magnetization; Random access memory; Spin valves; Substrates;
Journal_Title :
Magnetics, IEEE Transactions on
