Spin-valves using perovskite antiferromagnets as the pinning layers

Author

Sakakima, H. ; Satomi, M. ; Hirota, E. ; Adachi, H.

Author_Institution

Central Res. Lab., Matsushita Electr. Ind. Co. Ltd., Kyoto, Japan

Volume

35

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

2958

Lastpage

2960

Abstract

A new type of spin-valves using perovskite antiferromagnets, MFeO ₈ (M=Y,La,Pr,Nd,Sm), as the pinning layers was developed. These spin-valves are composed of MFeO₈/P/Cu/F, where P and F are the pinned and free layers, respectively, and were prepared by sputtering on Si or glass substrates. Among these spin-valves, LaFeO₃/CoFe/Cu/CoFe showed large MR ratios, 11.4%, at RT and the MR ratios were stable even after the annealing at 350°C

Keywords

annealing; antiferromagnetic materials; lanthanum compounds; magnetoresistance; neodymium compounds; praseodymium compounds; samarium compounds; spin valves; sputtered coatings; thermal stability; yttrium compounds; 300 K; 350 degC; LaFeO₃-CoFe-Cu-CoFe; LaFeO₃/CoFe/Cu/CoFe; LaFeO₈; MFeO₈ (M=Y,La,Pr,Nd,Sm); NdFeO₈; PrFeO₈; Si; Si substrate; SmFeO₈; YFeO₈; annealing; glass substrate; magnetoresistance ratio; perovskite antiferromagnet pinning layer; spin-valves; sputtered films; Annealing; Antiferromagnetic materials; Glass; Iron; Magnetic films; Neodymium; Semiconductor films; Sputtering; Substrates; Valves;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.801046

Filename

801046