Title :
The optimum oxidation state of AlOx magnetic tunnel junctions
Author :
Gillies, M.F. ; Oepts, W. ; Kuiper, A.E.T. ; Coehoorn, R. ; Tamminga, Y. ; Snijders, J.H.M. ; Bik, W.M.Arnold
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
fDate :
9/1/1999 12:00:00 AM
Abstract :
In this paper we present results on how both the resistance and the magnetoresistance of magnetic spin-tunnel junctions depend on the oxidation time used to form the AlOx barrier. The bias voltage dependence of junctions with barriers created with different oxidation times is measured and found to be optimal when the oxidation time is chosen to give sufficient oxygen for the barrier to be stoichiometric Al2O3. The oxygen content of the barrier was determined by Rutherford backscattering spectrometry and elastic recoil detection
Keywords :
Rutherford backscattering; aluminium compounds; electrical resistivity; magnetic multilayers; magnetoresistance; oxidation; stoichiometry; tunnelling; Al2O3; AlO; AlOx barrier; AlOx magnetic tunnel junctions; Co; FeMn; NiFe; Rutherford backscattering spectrometry; Ta; bias voltage dependence; elastic recoil detection; magnetoresistance; optimum oxidation state; oxidation time; oxidation times; oxygen content; resistance; spin-tunnel junctions; stoichiometric Al2O3; Backscatter; Electrical resistance measurement; Electrodes; Laboratories; Magnetic tunneling; Oxidation; Spectroscopy; Time measurement; Tunneling magnetoresistance; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on
