DocumentCode :
1262973
Title :
Epitaxial growth of (111) oriented manganese zinc ferrite thin films and their magnetic properties
Author :
Hiratsuka, N. ; Miyazaki, T. ; Kakizaki, K. ; Kwon, O.H. ; Bae, C.S.
Author_Institution :
Graduate Sch. of Sci. & Eng., Saitama Univ., Urawa, Japan
Volume :
35
Issue :
5
fYear :
1999
fDate :
9/1/1999 12:00:00 AM
Firstpage :
3055
Lastpage :
3057
Abstract :
Manganese zinc ferrite (MnZn ferrite) thin films were prepared on quartz substrates buffered by a ZnO underlayer by rf magnetron sputtering. The ZnO underlayers exhibited preferentially (001) orientation for any thickness. When Mn-Zn-Fe oxide layers as-deposited on the ZnO underlayers were annealed in reduced atmosphere at 800°C for 5 hours, single-phase spinel type ferrites were formed. The films were preferentially oriented to the [111] direction normal to the film plane. Thin ZnO underlayers successfully induced (111) orientation in plane because of good lattice matching between the ZnO and the spinel phase. Films with a composition of Mn:Zn:Fe=23:9:68 had a saturation magnetization value of 410 emu/cm3. The relationship between the composition and the magnetization for the films was similar to that for the bulk material
Keywords :
annealing; ferrites; interface structure; magnetic epitaxial layers; magnetisation; manganese compounds; sputter deposition; stoichiometry; vapour phase epitaxial growth; zinc compounds; (111) orientation; (111) oriented manganese zinc ferrite thin films; 5 h; 800 C; Mn-Zn-Fe oxide layers; MnZn ferrite; SiO2; ZnMnFe2O4; ZnO; ZnO underlayer; ZnO underlayers; composition; epitaxial growth; lattice matching; magnetic properties; preferential (001) orientation; quartz substrates; rf magnetron sputtering; saturation magnetization; single-phase spinel type ferrites; spinel phase; Annealing; Atmosphere; Epitaxial growth; Ferrite films; Magnetic materials; Manganese; Saturation magnetization; Sputtering; Substrates; Zinc oxide;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.801083
Filename :
801083
Link To Document :
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