• DocumentCode
    1263219
  • Title

    Effects of Device Geometry on Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

  • Author

    Lee, Min Jin ; Choi, Woo Young

  • Author_Institution
    Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
  • Volume
    33
  • Issue
    10
  • fYear
    2012
  • Firstpage
    1459
  • Lastpage
    1461
  • Abstract
    This letter discusses the effects of device geometry, such as channel layer thickness and multiple-gate structure on hetero-gate-dielectric tunneling field-effect transistors (HG TFETs). According to simulation results, contrary to conventional TFETs or MOSFETs, HG TFETs show improved subthreshold swing (SS) for increasing channel thickness or decreasing number of gates. The trend with on-current ION depends on operating voltage VDD.
  • Keywords
    field effect transistors; tunnelling; HG-TFET; MOSFET; channel layer thickness; device geometry; hetero-gate-dielectric tunneling field effect transistors; multiple-gate structure; subthreshold swing; Geometry; Logic gates; Mercury (metals); Silicon; Transistors; Tunneling; Device geometry; hetero-gate-dielectric tunneling field-effect transistor (HG TFET); subthreshold swing $(SS)$;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2206790
  • Filename
    6266685
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1263219