Title :
Effects of Device Geometry on Hetero-Gate-Dielectric Tunneling Field-Effect Transistors
Author :
Lee, Min Jin ; Choi, Woo Young
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
Abstract :
This letter discusses the effects of device geometry, such as channel layer thickness and multiple-gate structure on hetero-gate-dielectric tunneling field-effect transistors (HG TFETs). According to simulation results, contrary to conventional TFETs or MOSFETs, HG TFETs show improved subthreshold swing (SS) for increasing channel thickness or decreasing number of gates. The trend with on-current ION depends on operating voltage VDD.
Keywords :
field effect transistors; tunnelling; HG-TFET; MOSFET; channel layer thickness; device geometry; hetero-gate-dielectric tunneling field effect transistors; multiple-gate structure; subthreshold swing; Geometry; Logic gates; Mercury (metals); Silicon; Transistors; Tunneling; Device geometry; hetero-gate-dielectric tunneling field-effect transistor (HG TFET); subthreshold swing $(SS)$;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2206790
