• DocumentCode
    1263224
  • Title

    Ce-substituted YIG films grown by pulsed laser deposition for magneto-optic waveguide devices

  • Author

    Kim, Hyonju ; Grishin, A.M. ; Rao, K.V. ; Yu, S.C. ; Sbiaa, R. ; Le Gall, H.

  • Author_Institution
    Dept. of Condensed Matter Phys., R. Inst. of Technol., Stockholm, Sweden
  • Volume
    35
  • Issue
    5
  • fYear
    1999
  • fDate
    9/1/1999 12:00:00 AM
  • Firstpage
    3163
  • Lastpage
    3165
  • Abstract
    Ce-substituted yttrium iron garnet films have been epitaxially grown on (111)-oriented gadolinium gallium garnet substrates by pulsed laser deposition technique. X-ray diffraction measurements show epitaxial growth of the garnet film along its [111] axis. The films were grown at substrate temperature of 790°C and various oxygen partial pressure varying from 10 to 100 mTorr. From the magnetic properties measured by VSM, we found that the fabricated (CeY2)Fe5 O12 films have in-plane magnetization with no preferential easy direction in the plane. The saturation Faraday rotation values obtained from measurements at λ=633 nm and room temperature are found to be dependent on the oxygen pressure, with the maximum value of 0.7 deg/μm for the films grown at 50 mTorr
  • Keywords
    Faraday effect; X-ray diffraction; cerium compounds; gadolinium compounds; garnets; magnetic epitaxial layers; magnetic microwave devices; magnetisation; magneto-optical devices; pulsed laser deposition; yttrium compounds; 10 to 100 mtorr; 633 nm; 790 degC; CeYFe5O12-GdGa5O12; CeYIG-GdGG; VSM; X-ray diffraction measurements; in-plane magnetization; magneto-optic waveguide devices; partial pressure; pulsed laser deposition; saturation Faraday rotation values; substrate temperature; Epitaxial growth; Garnet films; Iron; Magnetic films; Optical pulses; Pulsed laser deposition; Substrates; X-ray diffraction; X-ray lasers; Yttrium;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.801115
  • Filename
    801115