• DocumentCode
    1263407
  • Title

    A Monolithic AlGaN/GaN HEMT VCO Using BST Thin-Film Varactor

  • Author

    Kong, Cen ; Li, Hui ; Chen, Xiaojian ; Jiang, Shuwen ; Zhou, Jianjun ; Chen, Chen

  • Author_Institution
    Sci. & Technol. on Monolithic Integrated Circuits & Modules Lab., Nanjing Electron. Devices Inst., Nanjing, China
  • Volume
    60
  • Issue
    11
  • fYear
    2012
  • Firstpage
    3413
  • Lastpage
    3419
  • Abstract
    A monolithic AlGaN/GaN HEMT voltage-controlled oscillator (VCO) using a barium-strontium-titanate (BST) thin-film varactor is presented. The fabrication process of the VCO is fully compatible with the standard process of GaN HEMT monolithic microwave integrated circuits (MMICs). An improved equivalent circuit model of the fabricated BST varactor for microwave application was developed for the MMIC VCO circuit design. The experiment MMIC VCO exhibits 1-GHz tunable bandwidth at the central frequency of 7 GHz when the BST varactor bias changed from 0 to 24 V. An output power of 17 dBm and phase noise of -81 dBc/Hz (at offset of 100 kHz) are obtained at drain bias of 8 V and BST varactor of 0 V. The results indicate that the monolithic BST varactor is suitable for microwave application, and the integration of the BST varactor can be successfully applied to develop various tunable GaN MMICs.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; MMIC oscillators; aluminium compounds; barium compounds; equivalent circuits; gallium compounds; strontium compounds; thin film capacitors; varactors; voltage-controlled oscillators; wide band gap semiconductors; AlGaN-GaN; BST thin-film varactor; BaSrTiO3; MMIC VCO circuit design; VCO fabrication process; bandwidth 1 GHz; barium-strontium-titanate thin-film varactor; equivalent circuit model; frequency 7 GHz; microwave application; monolithic BST varactor; monolithic HEMT VCO; monolithic HEMT voltage-controlled oscillator; monolithic microwave integrated circuits; phase noise; voltage 0 V to 24 V; Gallium nitride; HEMTs; Integrated circuit modeling; MMICs; Tuning; Varactors; Voltage-controlled oscillators; AlGaN/GaN HEMT; barium–strontium–titanate (BST) varactor; monolithic microwave integrated circuit (MMIC) process; monolithic voltage-controlled oscillator (VCO);
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2012.2209442
  • Filename
    6266715