DocumentCode
1263407
Title
A Monolithic AlGaN/GaN HEMT VCO Using BST Thin-Film Varactor
Author
Kong, Cen ; Li, Hui ; Chen, Xiaojian ; Jiang, Shuwen ; Zhou, Jianjun ; Chen, Chen
Author_Institution
Sci. & Technol. on Monolithic Integrated Circuits & Modules Lab., Nanjing Electron. Devices Inst., Nanjing, China
Volume
60
Issue
11
fYear
2012
Firstpage
3413
Lastpage
3419
Abstract
A monolithic AlGaN/GaN HEMT voltage-controlled oscillator (VCO) using a barium-strontium-titanate (BST) thin-film varactor is presented. The fabrication process of the VCO is fully compatible with the standard process of GaN HEMT monolithic microwave integrated circuits (MMICs). An improved equivalent circuit model of the fabricated BST varactor for microwave application was developed for the MMIC VCO circuit design. The experiment MMIC VCO exhibits 1-GHz tunable bandwidth at the central frequency of 7 GHz when the BST varactor bias changed from 0 to 24 V. An output power of 17 dBm and phase noise of -81 dBc/Hz (at offset of 100 kHz) are obtained at drain bias of 8 V and BST varactor of 0 V. The results indicate that the monolithic BST varactor is suitable for microwave application, and the integration of the BST varactor can be successfully applied to develop various tunable GaN MMICs.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC oscillators; aluminium compounds; barium compounds; equivalent circuits; gallium compounds; strontium compounds; thin film capacitors; varactors; voltage-controlled oscillators; wide band gap semiconductors; AlGaN-GaN; BST thin-film varactor; BaSrTiO3; MMIC VCO circuit design; VCO fabrication process; bandwidth 1 GHz; barium-strontium-titanate thin-film varactor; equivalent circuit model; frequency 7 GHz; microwave application; monolithic BST varactor; monolithic HEMT VCO; monolithic HEMT voltage-controlled oscillator; monolithic microwave integrated circuits; phase noise; voltage 0 V to 24 V; Gallium nitride; HEMTs; Integrated circuit modeling; MMICs; Tuning; Varactors; Voltage-controlled oscillators; AlGaN/GaN HEMT; barium–strontium–titanate (BST) varactor; monolithic microwave integrated circuit (MMIC) process; monolithic voltage-controlled oscillator (VCO);
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2012.2209442
Filename
6266715
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