DocumentCode
1263653
Title
Process and Reliability Sensors for Nanoscale CMOS
Author
Keane, J.P. ; Kim, Chul Han ; Qunzeng Liu ; Sapatnekar, Sachin S.
Volume
29
Issue
5
fYear
2012
Firstpage
8
Lastpage
17
Abstract
This paper describes the use of sensing schemes that drive on-chip process and aging variation measurements in manufactured silicon.
Keywords
CMOS integrated circuits; integrated circuit manufacture; integrated circuit reliability; nanotechnology; aging variation measurement; nanoscale CMOS; on-chip process; process sensor; reliability sensor; Aging; Frequency measurement; Odometers; Path planning; Sensor phenomena and characterization; Stress analysis; Temperature measurement; Bias Temperature Instability; Critical Paths; Reliability; Sensors; Silicon odometer; Variations;
fLanguage
English
Journal_Title
Design & Test of Computers, IEEE
Publisher
ieee
ISSN
0740-7475
Type
jour
DOI
10.1109/MDT.2012.2211561
Filename
6266774
Link To Document