A sub-1-V 15-ppm/°C CMOS bandgap voltage reference without requiring low threshold voltage device

Author

Leung, Ka Nang ; Mok, Philip K T

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

Volume

37

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

526

Lastpage

530

Abstract

A sub-1-V CMOS bandgap voltage reference requiring no low threshold voltage device is introduced in this paper. In a CMOS technology with V_thn ≈ |V_thp| ≈ 0.9 V at 0°C, the minimum supply voltage of the proposed voltage reference is 0.98 V, and the maximum supply current is 18 μA. A temperature coefficient of 15 ppm/°C from 0°C to 100°C is recorded after trimming. The active area of the circuit is about 0.24 mm²

Keywords

CMOS analogue integrated circuits; current mirrors; integrated circuit design; low-power electronics; reference circuits; 0 to 100 C; 0.9 V; 0.98 V; 18 muA; CMOS bandgap voltage reference; active area; current mirrors; low threshold voltage pMOS transistors; low voltage; low-voltage startup circuits; maximum supply current; minimum supply voltage; self-biased voltage reference; temperature coefficient; threshold voltages; trimming; CMOS technology; Immune system; Land surface temperature; MOS devices; MOSFETs; Mirrors; Photonic band gap; Resistors; Schottky diodes; Threshold voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.991391

Filename

991391